产品线卡
Nexperia总部位于荷兰，是一家在欧洲拥有丰富悠久发展历史的全球性半导体公司，目前在欧洲、亚洲和美国共有14,000多名员工。作为基础半导体器件开发和生产的领跑者，Nexperia的器件被广泛应用于汽车、工业、移动和消费等多个应用领域，几乎为世界上所有电子设计的基本功能提供支持。
Nexperia为全球客户提供服务，每年的产品出货量超过1,000亿件。这些产品在效率（如工艺、尺寸、功率及性能）方面成为行业基准，获得广泛认可。Nexperia拥有丰富的IP产品组合和持续扩充的产品范围，并获得了IATF 16949、ISO 9001、ISO 14001和ISO 45001标准认证，充分体现了公司对于创新、高效和满足行业严苛要求的坚定承诺。
Low voltage e-mode GaN FETs
Optimum flexibility for high-power
Delivering optimum flexibility in power systems, Nexperia e-mode GaN FETs are ideal for high-power <200 V applications. Offering superior switching performance due very low QC and QOSS values. Enabling faster charging for e-mobility and wired / wireless changing systems as well as significant space and BOM savings in LiDAR and lower noise in Class D audio amplifiers.
Delivering optimum flexibility in power systems, Nexperia e-mode GaN FETs are ideal for high-power <200 V applications. Offering superior switching performance due very low QC and QOSS values. Enabling faster charging for e-mobility and wired / wireless changing systems as well as significant space and BOM savings in LiDAR and lower noise in Class D audio amplifiers.
Optimum flexibility for high-power
Delivering optimum flexibility in power systems, Nexperia e-mode GaN FETs are ideal for high-power <200 V applications. Offering superior switching performance due very low QC and QOSS values. Enabling faster charging for e-mobility and wired / wireless changing systems as well as significant space and BOM savings in LiDAR and lower noise in Class D audio amplifiers.
Delivering optimum flexibility in power systems, Nexperia e-mode GaN FETs are ideal for high-power <200 V applications. Offering superior switching performance due very low QC and QOSS values. Enabling faster charging for e-mobility and wired / wireless changing systems as well as significant space and BOM savings in LiDAR and lower noise in Class D audio amplifiers.
650 V cascode GaN FETs
Performance, efficiency, reliability
The very high electron mobility of GaN enables the creation of devices with low on-resistance and exceptionally high switching frequency capability. These advantages are vital in next-generation power systems, such as industry 4.0 and renewable energy applications. Nexperia cascode GaN FETs are the enabler in these applications offering high power density, high performance, and high switching frequency. This unique solution facilitates the ease of driving the devices using well-known Si MOSFET gate drivers. Additionally, they deliver unmatched high junction temperature (Tj [max] 175 °C), ease of design freedom and improved reliability of power systems.
The very high electron mobility of GaN enables the creation of devices with low on-resistance and exceptionally high switching frequency capability. These advantages are vital in next-generation power systems, such as industry 4.0 and renewable energy applications. Nexperia cascode GaN FETs are the enabler in these applications offering high power density, high performance, and high switching frequency. This unique solution facilitates the ease of driving the devices using well-known Si MOSFET gate drivers. Additionally, they deliver unmatched high junction temperature (Tj [max] 175 °C), ease of design freedom and improved reliability of power systems.
Performance, efficiency, reliability
The very high electron mobility of GaN enables the creation of devices with low on-resistance and exceptionally high switching frequency capability. These advantages are vital in next-generation power systems, such as industry 4.0 and renewable energy applications. Nexperia cascode GaN FETs are the enabler in these applications offering high power density, high performance, and high switching frequency. This unique solution facilitates the ease of driving the devices using well-known Si MOSFET gate drivers. Additionally, they deliver unmatched high junction temperature (Tj [max] 175 °C), ease of design freedom and improved reliability of power systems.
The very high electron mobility of GaN enables the creation of devices with low on-resistance and exceptionally high switching frequency capability. These advantages are vital in next-generation power systems, such as industry 4.0 and renewable energy applications. Nexperia cascode GaN FETs are the enabler in these applications offering high power density, high performance, and high switching frequency. This unique solution facilitates the ease of driving the devices using well-known Si MOSFET gate drivers. Additionally, they deliver unmatched high junction temperature (Tj [max] 175 °C), ease of design freedom and improved reliability of power systems.
Bi-directional GaN FETs
Unconventional innovative GaN solution in BMS
Nexperia’s bi-directional GaN FETs are ideal for power applications where voltage blocking and current conduction are important functions. For example, they deliver a superior solution when replacing conventional back-to-back silicon MOSFETs in Battery Management Systems (BMS). Guaranteeing low conduction losses and ultra-high switching speed capability as well as delivering significant space savings (smallest footprint). They also bring these benefits when applied as over-voltage protection (OVP), switching circuits for multiple power sources and high side load switches in bidirectional converters.
Nexperia’s bi-directional GaN FETs are ideal for power applications where voltage blocking and current conduction are important functions. For example, they deliver a superior solution when replacing conventional back-to-back silicon MOSFETs in Battery Management Systems (BMS). Guaranteeing low conduction losses and ultra-high switching speed capability as well as delivering significant space savings (smallest footprint). They also bring these benefits when applied as over-voltage protection (OVP), switching circuits for multiple power sources and high side load switches in bidirectional converters.
Unconventional innovative GaN solution in BMS
Nexperia’s bi-directional GaN FETs are ideal for power applications where voltage blocking and current conduction are important functions. For example, they deliver a superior solution when replacing conventional back-to-back silicon MOSFETs in Battery Management Systems (BMS). Guaranteeing low conduction losses and ultra-high switching speed capability as well as delivering significant space savings (smallest footprint). They also bring these benefits when applied as over-voltage protection (OVP), switching circuits for multiple power sources and high side load switches in bidirectional converters.
Nexperia’s bi-directional GaN FETs are ideal for power applications where voltage blocking and current conduction are important functions. For example, they deliver a superior solution when replacing conventional back-to-back silicon MOSFETs in Battery Management Systems (BMS). Guaranteeing low conduction losses and ultra-high switching speed capability as well as delivering significant space savings (smallest footprint). They also bring these benefits when applied as over-voltage protection (OVP), switching circuits for multiple power sources and high side load switches in bidirectional converters.
650 V e-mode GaN FETs
Optimized balance of voltage and power
Delivering optimum flexibility in power systems, Nexperia e-mode GaN FETs are ideal for low-power 650 V applications. Offering superior switching performance due very low QC and QOSS values, they bring improved efficiency to 650 V AC/DC and DC/AC power conversion. As well as bringing significant space and BOM savings in BLDC and micro servo motor drives or LED drivers.
Delivering optimum flexibility in power systems, Nexperia e-mode GaN FETs are ideal for low-power 650 V applications. Offering superior switching performance due very low QC and QOSS values, they bring improved efficiency to 650 V AC/DC and DC/AC power conversion. As well as bringing significant space and BOM savings in BLDC and micro servo motor drives or LED drivers.
Optimized balance of voltage and power
Delivering optimum flexibility in power systems, Nexperia e-mode GaN FETs are ideal for low-power 650 V applications. Offering superior switching performance due very low QC and QOSS values, they bring improved efficiency to 650 V AC/DC and DC/AC power conversion. As well as bringing significant space and BOM savings in BLDC and micro servo motor drives or LED drivers.
Delivering optimum flexibility in power systems, Nexperia e-mode GaN FETs are ideal for low-power 650 V applications. Offering superior switching performance due very low QC and QOSS values, they bring improved efficiency to 650 V AC/DC and DC/AC power conversion. As well as bringing significant space and BOM savings in BLDC and micro servo motor drives or LED drivers.
NGW75T65M3DFP
650 V, 75 A trench field-stop IGBT with full rated silicon diode
The NGW75T65M3DFP is a robust Insulated-Gate Bipolar Transistor (IGBT) featuring third??-??generation technology. It combines carrier stored trench-gate and field-stop (FS) structures. The NGW75T65M3DFP is rated to 175 °C with optimized IGBT turn-off losses, and has a short-circuit withstand time of 5 μs. This hard?-?switching 650 V, 75 A IGBT is optimized for high?-?voltage, high?-?frequency industrial power inverter applications and servo motor drive applications.
The NGW75T65M3DFP is a robust Insulated-Gate Bipolar Transistor (IGBT) featuring third??-??generation technology. It combines carrier stored trench-gate and field-stop (FS) structures. The NGW75T65M3DFP is rated to 175 °C with optimized IGBT turn-off losses, and has a short-circuit withstand time of 5 μs. This hard?-?switching 650 V, 75 A IGBT is optimized for high?-?voltage, high?-?frequency industrial power inverter applications and servo motor drive applications.
650 V, 75 A trench field-stop IGBT with full rated silicon diode
The NGW75T65M3DFP is a robust Insulated-Gate Bipolar Transistor (IGBT) featuring third??-??generation technology. It combines carrier stored trench-gate and field-stop (FS) structures. The NGW75T65M3DFP is rated to 175 °C with optimized IGBT turn-off losses, and has a short-circuit withstand time of 5 μs. This hard?-?switching 650 V, 75 A IGBT is optimized for high?-?voltage, high?-?frequency industrial power inverter applications and servo motor drive applications.
The NGW75T65M3DFP is a robust Insulated-Gate Bipolar Transistor (IGBT) featuring third??-??generation technology. It combines carrier stored trench-gate and field-stop (FS) structures. The NGW75T65M3DFP is rated to 175 °C with optimized IGBT turn-off losses, and has a short-circuit withstand time of 5 μs. This hard?-?switching 650 V, 75 A IGBT is optimized for high?-?voltage, high?-?frequency industrial power inverter applications and servo motor drive applications.
NGW75T65H3DFP
650 V, 75 A trench field-stop IGBT with full rated silicon diode
The NGW75T65H3DFP is a robust Insulated-Gate Bipolar Transistor (IGBT) featuring third??-??generation technology. It combines carrier stored trench-gate and field-stop (FS) structures. The NGW75T65H3DFP is rated to 175 °C with optimized IGBT turn-off losses. This hard?-?switching 650 V, 75 A IGBT is optimized for high?-?voltage, high?-?frequency industrial power inverter applications.
The NGW75T65H3DFP is a robust Insulated-Gate Bipolar Transistor (IGBT) featuring third??-??generation technology. It combines carrier stored trench-gate and field-stop (FS) structures. The NGW75T65H3DFP is rated to 175 °C with optimized IGBT turn-off losses. This hard?-?switching 650 V, 75 A IGBT is optimized for high?-?voltage, high?-?frequency industrial power inverter applications.
650 V, 75 A trench field-stop IGBT with full rated silicon diode
The NGW75T65H3DFP is a robust Insulated-Gate Bipolar Transistor (IGBT) featuring third??-??generation technology. It combines carrier stored trench-gate and field-stop (FS) structures. The NGW75T65H3DFP is rated to 175 °C with optimized IGBT turn-off losses. This hard?-?switching 650 V, 75 A IGBT is optimized for high?-?voltage, high?-?frequency industrial power inverter applications.
The NGW75T65H3DFP is a robust Insulated-Gate Bipolar Transistor (IGBT) featuring third??-??generation technology. It combines carrier stored trench-gate and field-stop (FS) structures. The NGW75T65H3DFP is rated to 175 °C with optimized IGBT turn-off losses. This hard?-?switching 650 V, 75 A IGBT is optimized for high?-?voltage, high?-?frequency industrial power inverter applications.
NGW75T65H3DF
IGBT with trench construction, fast recovery diode
The NGW75T65H3DF is a robust Insulated-Gate Bipolar Transistor (IGBT) featuring third?-?generation technology. It combines carrier stored trench-gate and field-stop (FS) structures. The NGW75T65H3DF is rated to 175 °C with optimized IGBT turn-off losses. This hard?-?switching 650 V, 75 A IGBT is optimized for high?-?voltage, high?-?frequency industrial power inverter applications.
The NGW75T65H3DF is a robust Insulated-Gate Bipolar Transistor (IGBT) featuring third?-?generation technology. It combines carrier stored trench-gate and field-stop (FS) structures. The NGW75T65H3DF is rated to 175 °C with optimized IGBT turn-off losses. This hard?-?switching 650 V, 75 A IGBT is optimized for high?-?voltage, high?-?frequency industrial power inverter applications.
IGBT with trench construction, fast recovery diode
The NGW75T65H3DF is a robust Insulated-Gate Bipolar Transistor (IGBT) featuring third?-?generation technology. It combines carrier stored trench-gate and field-stop (FS) structures. The NGW75T65H3DF is rated to 175 °C with optimized IGBT turn-off losses. This hard?-?switching 650 V, 75 A IGBT is optimized for high?-?voltage, high?-?frequency industrial power inverter applications.
The NGW75T65H3DF is a robust Insulated-Gate Bipolar Transistor (IGBT) featuring third?-?generation technology. It combines carrier stored trench-gate and field-stop (FS) structures. The NGW75T65H3DF is rated to 175 °C with optimized IGBT turn-off losses. This hard?-?switching 650 V, 75 A IGBT is optimized for high?-?voltage, high?-?frequency industrial power inverter applications.
NGW60T65M3DFP
650 V, 60 A trench field-stop IGBT with full rated silicon diode
The NGW60T65M3DFP is a robust Insulated-Gate Bipolar Transistor (IGBT) featuring third??-??generation technology. It combines carrier stored trench-gate and field-stop (FS) structures. The NGW60T65M3DFP is rated to 175 °C with optimized IGBT turn-off losses, and has a short-circuit withstand time of 5 μs. This hard?-?switching 650 V, 60 A IGBT is optimized for high?-?voltage, high?-?frequency industrial power inverter applications and servo motor drive applications.
The NGW60T65M3DFP is a robust Insulated-Gate Bipolar Transistor (IGBT) featuring third??-??generation technology. It combines carrier stored trench-gate and field-stop (FS) structures. The NGW60T65M3DFP is rated to 175 °C with optimized IGBT turn-off losses, and has a short-circuit withstand time of 5 μs. This hard?-?switching 650 V, 60 A IGBT is optimized for high?-?voltage, high?-?frequency industrial power inverter applications and servo motor drive applications.
650 V, 60 A trench field-stop IGBT with full rated silicon diode
The NGW60T65M3DFP is a robust Insulated-Gate Bipolar Transistor (IGBT) featuring third??-??generation technology. It combines carrier stored trench-gate and field-stop (FS) structures. The NGW60T65M3DFP is rated to 175 °C with optimized IGBT turn-off losses, and has a short-circuit withstand time of 5 μs. This hard?-?switching 650 V, 60 A IGBT is optimized for high?-?voltage, high?-?frequency industrial power inverter applications and servo motor drive applications.
The NGW60T65M3DFP is a robust Insulated-Gate Bipolar Transistor (IGBT) featuring third??-??generation technology. It combines carrier stored trench-gate and field-stop (FS) structures. The NGW60T65M3DFP is rated to 175 °C with optimized IGBT turn-off losses, and has a short-circuit withstand time of 5 μs. This hard?-?switching 650 V, 60 A IGBT is optimized for high?-?voltage, high?-?frequency industrial power inverter applications and servo motor drive applications.
地址：深圳市南山区粤海街道高新区社区高新南九道45号西北工业大学三航科技大厦15楼15C
电话：0755-8612 8820
